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| 2SB772Q Elektronische Bauelemente RoHS Compliant Product D D1 A PNP Silicon Medium Power Transistor SOT-89 E1 FEATURES Power dissipation P CM : 500mW Tamb=25 1.BASE Collector current 2.COLLECTOR A ICM : -3 3.EMITTER Collector-base voltage V VB(BR)CBO : -40 Operating and storage junction temperature range TJ Tstg: -55 to +150 b1 b L E e e1 C Dimensions In Millimeters Symbol A b b1 c D D1 E E1 e e1 L 2.900 0.900 Min 1.400 0.320 0.360 0.350 4.400 1.400 2.300 3.940 1.500TYP 3.100 1.100 Max 1.600 0.520 0.560 0.440 4.600 1.800 2.600 4.250 Min Dimensions In Inches Max 0.063 0.020 0.022 0.017 0.181 0.071 0.102 0.167 0.060TYP 0.114 0.035 0.122 0.043 0.055 0.013 0.014 0.014 0.173 0.055 0.091 0.155 ELECTRICAL CHARACTERISTICS Tamb=25 unlessotherwise specified CLASSIFICATION OF hFE(1) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO hFE 1 Test conditions IE=0 IB=0 IC=0 IE=0 IB=0 IC=0 MIN -40 -30 -6 TYP MAX UNIT V V V Ic=-100 A IC= -10 mA , IE= -100 A VCB= -40 V , VCE=-30 V , VEB=-6V , -1 -10 -1 60 32 -0.5 -1.5 400 A A A VCE= -2V, IC= -1A VCE=-2V, IC= -100mA IC=-2A, IC=-2A, IB= -0.2A IB= -0.2A IC=-0.1A DC current gain hFE Collector-emitter saturation voltage Base-emitter saturation voltage 2 VCE(sat) VBE(sat) V V VCE= -5V, Transition frequency fT f = 10MHz 50 MHz CLASSIFICATION OF hFE(1) Rank Range http://www.SeCoSGmbH.com R 60-120 O 100-200 Y 160-320 GR 200-400 Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 1 of 2 2SB772Q Elektronische Bauelemente PNP Silicon Medium Power Transistor RATING AND CHARACTERISTIC CURVES Fig.1 Static characteristics 150 Fig.2 Derating curve of safe operating areas 12 Fig.3 Power Derating -Ic,Collector current(A) 1.6 - Ic Derating(%) 1.2 100 Power Dissipation(W) -IB=9mA -IB=8MA -IB=7mA -IB=6mA -IB=5mA S/ io at ip ss Di 8 b lim 0.8 ite d -IB=4mA -IB=3mA 0.4 50 4 n lim -IB=2mA -IB=1mA 0 0 4 8 12 16 20 -50 0 50 ite d 0 0 100 150 200 -50 0 50 100 150 200 -Collector-Emitter voltage(V) Tc,Case Temperature(C) Tc,Case Temperature(C) Fig.4 Collector Output capacitance 3 10 Fig.5 Current gainbandwidth product 3 10 Fig.6 Safe operating area 1 10 Ic(max),Pulse 10 S 1m 0. Output Capacitance(pF) FT(MHz), Current gainbandwidth product 2 10 IE=0 f=1MHz VCE=5V 2 10 -Ic,Collector current(A) Ic(max),DC mS 1m S 10 0 IB=8mA 1 10 1 10 -1 10 0 10 10 0 -1 10 -2 10 -3 10 0 10 -2 10 -1 10 10 0 1 10 -2 10 10 0 1 10 2 10 -Collector-Base Voltage(v) Ic,Collector current(A) Collector-Emitter Voltage Fig.7 DC current gain 3 10 Fig.8 Saturation Voltage 4 10 VCE=-2V -Saturation Voltage(mV) DC current Gain,H FE 3 10 VBE(sat) 2 10 2 10 1 10 VCE(sat) 1 10 0 10 0 10 1 10 2 10 3 10 4 10 0 10 0 10 1 10 2 10 3 10 4 10 -Ic,Collector current(mA) -Ic,Collector current(mA) http://www.SeCoSGmbH.com Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 2 of 2 |
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